发明名称 |
Dielectric insulation structure for integrating electronic semiconductor devices and relevant manufacturing process |
摘要 |
A dielectric insulation structure is formed in a silicon layer by integrating a dielectric trench structure therein. The dielectric trench structure defines an insulation well where semiconductor devices are to be integrated therein. The dielectric trench structure is on a hollow region that is completely surrounded by a dielectric area. The dielectric area also forms the side insulation of the dielectric trench structure. The dielectric trench structure is interrupted by a plurality of points to define a plurality of side support regions for the insulation well.
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申请公布号 |
US6888213(B2) |
申请公布日期 |
2005.05.03 |
申请号 |
US20030444102 |
申请日期 |
2003.05.22 |
申请人 |
STMICROELECTRONICS S.R.L. |
发明人 |
LEONARDI SALVATORE;MODICA ROBERTO;ARENA GIUSEPPE |
分类号 |
H01L21/762;(IPC1-7):H01L29/06 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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