发明名称 COMPOSITION FOR FORMING DIELECTRIC FILM AND METHOD FOR FORMING DIELECTRIC FILM OR PATTERN USING THE SAME
摘要 A composition for forming a porous dielectric film which is prepared by dissolving a siloxane-based precursor containing hydroxyl groups or alkoxy groups and a pore-generating material together with a condensation catalyst generator capable of curing the siloxane-based resin precursor, in an organic solvent. The porous dielectric film has a low dielectric constant and improved physical properties and is formed by coating the composition onto a substrate, followed by light exposure to cause polycondensation at low temperature. A method for forming a negative pattern of a porous dielectric film is also provided without the use of a photoresist by exposing the coated film to light through a mask, and removing unexposed regions with a developing agent.
申请公布号 KR20050040275(A) 申请公布日期 2005.05.03
申请号 KR20030075438 申请日期 2003.10.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LYU, YI YEOL;SEON, JONG BAEK;YIM, JIN HEONG
分类号 G03F7/075;C08G77/04;C08L71/02;C08L83/04;C09D5/25;C09D183/02;C09D183/04;C09D183/14;G03F7/00;G03F7/004;H01L21/312;H01L21/316;H01L21/4763;H01L21/768 主分类号 G03F7/075
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