FABRICATING METHOD OF ISOLATION LAYER IN SEMICONDUCTOR DEVICE,申请号KR20030075518-传众专利搜索

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发明名称	FABRICATING METHOD OF ISOLATION LAYER IN SEMICONDUCTOR DEVICE
摘要
申请公布号	KR20050040341(A)	申请公布日期	2005.05.03
申请号	KR20030075518	申请日期	2003.10.28
申请人	HYNIX SEMICONDUCTOR INC.	发明人	EUN, BYUNG SOO
分类号	H01L21/762;(IPC1-7):H01L21/762	主分类号	H01L21/762
代理机构		代理人
主权项
地址

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