| 发明名称 |
Method of wet etching a silicon and nitrogen containing material |
| 摘要 |
The invention relates to a method of manufacturing a semiconductor device comprising the step of removing a silicon and nitrogen containing material by means of wet etching with an aqueous solution comprising hydrofluoric acid in a low concentration, the aqueous solution being applied under elevated pressure to reach a temperature above 100° C.
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| 申请公布号 |
US6887796(B2) |
申请公布日期 |
2005.05.03 |
| 申请号 |
US20030475874 |
申请日期 |
2003.10.24 |
| 申请人 |
KONINKLIJKE PHILIPS ELECTRONICS N.V. |
发明人 |
KNOTTER DIRK MAARTEN;VAN WINGERDEN JOHANNES;ROVERS MADELON GERTRUDA JOSEPHINA |
| 分类号 |
C23F1/24;C09K13/04;C09K13/08;G03F7/09;H01L21/00;H01L21/027;H01L21/28;H01L21/306;H01L21/3065;H01L21/311;H01L21/3213;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L21/461 |
主分类号 |
C23F1/24 |
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