| 摘要 |
A semiconductor device includes a conductive layer formed on a silicon semiconductor substrate, cobalt silicide films formed in a surface layer of the conductive layer, an interlayer insulating film which covers the silicon semiconductor substrate thereabove, and a barrier metal film and a tungsten film which fill in a contact hole formed in the interlayer insulating film and is electrically connected to the cobalt silicide film. The positions of lower surfaces of the cobalt silicide films at the bottom of the contact hole are set lower than the position of a lower surface of the cobalt silicide film provided outside the contact hole. A cobalt silicide film having a necessary thickness can be ensured at the bottom of the contact hole. Further, a contact resistance can be reduced and a junction leak can be suppressed.
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