| 摘要 |
<p>A method of making a photomask ensures that the mask pattern is precisely formed. A mask blank is provided in which an opaque film and a mask film are disposed on a transparent substrate. The mask film and the opaque film are successively etched to form an opaque pattern and a mask pattern. Next, a dimension of the opaque pattern is measured. If the measured dimension of the opaque pattern is smaller than a reference value, the opaque pattern is etched using the mask pattern as an etching mask to attain the desired dimension of the opaque pattern. The mask pattern is then removed.</p> |
