发明名称 |
Method of forming a p-type group II-VI semiconductor crystal layer on a substrate |
摘要 |
A method of depositing a p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer over a substrate by a metalorganic chemical vapor deposition technique. A reaction gas is supplied to a surface of a heated substrate in a direction parallel or oblique to the substrate. The p-type magnesium-, cadmium- and/or zinc-oxide-based II-VI Group compound semiconductor crystal layer is grown on the heated substrate, while introducing a pressing gas substantially in a vertical direction toward the substrate to press the reaction gas against the entire surface of the substrate.
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申请公布号 |
US6887736(B2) |
申请公布日期 |
2005.05.03 |
申请号 |
US20030422568 |
申请日期 |
2003.04.23 |
申请人 |
CERMET, INC. |
发明人 |
NAUSE JEFFREY E.;MACIEJEWSKI JOSEPH OWEN;MUNNE VINCENTE;GANESAN SHANTHI |
分类号 |
C23C16/40;C23C16/44;C23C16/455;C23C16/458;C30B25/02;(IPC1-7):H01L21/04;H01L21/205 |
主分类号 |
C23C16/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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