发明名称 Charge pump circuit without body effects
摘要 A charge pump circuit has input and output nodes, a first transistor, a second transistor, a third transistor, a first capacitor, and a second capacitor. A drain of the first transistor and a drain of the second transistor are connected to the input node. A source of the second transistor and a drain of the third transistor are connected to the output node. The first capacitor is connected to a gate of the second transistor. The third transistor is connected to a substrate and a source of the second transistor. When the first transistor is turned on, a voltage at the input node will charge the first capacitor. When the second transistor is turned on, the third transistor is turned on simultaneously so that the substrate and the source of the second transistor will reach the same voltage level. Then, voltage at the input node will charge the second capacitor.
申请公布号 US6888400(B2) 申请公布日期 2005.05.03
申请号 US20030604405 申请日期 2003.07.17
申请人 EMEMORY TECHNOLOGY INC. 发明人 LIN HONG-CHIN;CHEN NAI-HSIEN;LU JAIN-HAO;HO CHIEN-HUNG
分类号 H02M3/07;(IPC1-7):G05F1/10 主分类号 H02M3/07
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