METHOD OF SLICING SEMICONDUCTOR SINGLE CRYSTAL INGOT

摘要

A METHOD OF SLICING A SEMICONDUCTOR SINGLE CRYSTAL INGOT BY A WIRE SAW SLICING APPARATUS AND A SEMICONDUCTOR WAFER PRODUCED BY THE METHOD, IN WHICH THE RUNNING DIRECTION (Y) OF THE WIRE (12) IS NOT CORRESPONDING WITH THE CLEAVAGE DIRECTIONS (A1, A2) OF THE SEMICONDUCTOR SINGLE CRYSTAL INGOT (W) SO THAT OCCURRENCE OF CRACKS OR BREAKAGE IN THE SEMICONDUCTOR WAFER PRODUCED BY THE METHOD CAN BE SUPPRESSED SIGNIFICANTLY WITHOUT ANY ADDITIONAL PROCESSES OR AN INCREASE IN COST.FIGURE 2