| 摘要 |
An integrated circuit device is formed by forming a gate conductive layer on a gate insulating layer on a substrate. The gate conductive layer and the gate insulating layer are dry-etched to provide a gate structure. A buffer layer is formed on the sidewall of the gate structure covering an interface in the gate structure between the gate conductive layer and the gate insulating layer. The gate structure is annealed, through the buffer layer, to repair damage caused during the dry-etching. |
