METHOD OF MANUFACTURING N-TYPE SEMICONDUCTOR DIAMOND, AND N-TYPE SEMICONDUCTOR DIAMOND

摘要

A method of manufacturing n-type semiconductor diamond by the present invention is characterized in producing diamond incorporating Li and N by implanting Li ions into, so that 10 ppm thereof will be contained i n, single-crystal diamond incorporating 10 ppm or more N, or else, in doping single-crystal diamond with Li and N ions, by implanting the ions so that ion-implantation depths at which the post-implantation Li and N concentrations each are 10 ppm or more will overlap, and thereafter annealin g the diamond in a temperature range of from 800.degree.C or more to less than 1800.degree.C to electrically activate the Li and N and restore the diamond crystalline structure. In the present invention, n-type semiconductor diamond incorporates, from the surface of the crystal to the same depth, 10 ppm or more of each of Li and N, wherein its sheet resistance is 10 7 .OMEGA./~ or less.