Method for forming thick metal silicide layer on gate electrode,申请号KR20030001051-传众专利搜索

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发明名称	Method for forming thick metal silicide layer on gate electrode
摘要
申请公布号	KR100486297(B1)	申请公布日期	2005.04.29
申请号	KR20030001051	申请日期	2003.01.08
申请人		发明人
分类号	H01L21/336;H01L21/3205;H01L21/4763;(IPC1-7):H01L21/336	主分类号	H01L21/336
代理机构		代理人
主权项
地址

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