发明名称 |
FABRICATING METHOD OF CMOS IMAGE SENSOR PROTECTING LOW TEMPERATURE OXIDE DELAMINATION |
摘要 |
<p>A method for fabricating a complementary metal oxide semiconductor image sensor is capable of protecting a low temperature oxide from delaminating a passivation layer. The method includes the steps of: forming a passivation layer on a pad metal; exposing a predetermined part of the pad metal by patterning the passivation layer using a first pad mask; forming an oxide layer on the exposed pad metal and the passivation layer formed around the pad open region; forming a color filter, a planarization layer and a microlens, sequentially; forming a low temperature oxide layer on the above structure to protect the microlens; and opening the pad metal by selectively etching the low temperature oxide layer and the oxide layer formed around the pad open region by a second pad mask.</p> |
申请公布号 |
KR20050039157(A) |
申请公布日期 |
2005.04.29 |
申请号 |
KR20030074572 |
申请日期 |
2003.10.24 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
KIM, EUN JI |
分类号 |
H01L27/146;H01L21/00;H01L21/44;H01L21/82;H01L23/48;H01L23/52;H01L27/14;H01L29/40;H01L31/00;H01L31/0203;H04N5/335;H04N5/369;H04N5/374;(IPC1-7):H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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