发明名称 |
A REFORM METHOD OF SEMICONDUCTOR THIN FILM, A REFORMED SEMICONDUCTOR THIN FILM AND A TEST METHOD THEREOF, A THIN FILM TRANSISTOR MADE OF THE SEMICONDUCTOR FILM AND IMAGE DISPLAYER HAVING A CIRCUIT USING THE SEMICONDUCTOR THIN FILM |
摘要 |
<p>A surface roughness of a polycrystalline semiconductor film to be formed by a laser annealing method is reduced. A transmittance distribution filter is disposed at the optical system of a laser annealing apparatus. The transmittance distribution filter controls an irradiation light intensity distribution along a scanning direction of a substrate formed with an amorphous silicon semiconductor thin film to have a distribution having an energy part equal to or higher than a fine crystal threshold on a high energy light intensity side and an energy part for melting and combining only a surface layer. This transmittance distribution filter is applied to an excimer laser annealing method, a phase shift stripe method or an SLS method respectively using a general line beam to thereby reduce the height of protrusions on a polycrystalline surface.</p> |
申请公布号 |
KR20050039521(A) |
申请公布日期 |
2005.04.29 |
申请号 |
KR20040055369 |
申请日期 |
2004.07.16 |
申请人 |
HITACHI DISPLAYS, LTD. |
发明人 |
GOTOH, JUN;SAITO, MASAKAZU;SATO, TAKESHI;TAKEDA, KAZUO |
分类号 |
G02F1/1368;B23K26/06;B23K26/073;H01L21/20;H01L21/268;H01L21/324;H01L21/336;H01L21/77;H01L27/12;H01L29/786;(IPC1-7):H01L21/20 |
主分类号 |
G02F1/1368 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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