| 摘要 |
A method for making a semiconductor device may include providing a semiconductor substrate and forming at least one metal oxide semiconductor field-effect transistor (MOSFET). The at least one MOSFET may be formed by forming a superlattice channel including a plurality of stacked groups of layers on the semiconductor substrate. Each group of layers of the superlattice channel may include a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and an energy band-modifying layer thereon. The energy-band modifying layer may include at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor. The method may further include forming a gate overlying the superlattice channel, and forming source and drain regions in the semiconductor substrate on opposing sides of the superlattice channel so that the superlattice channel has upper surface portions vertically stepped above adjacent upper surface portions of the source and drain regions.
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