| 发明名称 |
STRUCTURING METHOD, AND FIELD EFFECT TRANSISTORS |
| 摘要 |
Disclosed is a structuring method, among other things. According to said method, a filling material (22) having a T-shaped cross section is used as a structuring mask in order to create structures with sublithographic dimensions, particularly a double-fin field effect transistor. |
| 申请公布号 |
WO2005038930(A2) |
申请公布日期 |
2005.04.28 |
| 申请号 |
WO2004EP52333 |
申请日期 |
2004.09.28 |
| 申请人 |
INFINEON TECHNOLOGIES AG;TEWS, HELMUT;FEHLHABER, RODGER |
发明人 |
TEWS, HELMUT;FEHLHABER, RODGER |
| 分类号 |
H01L21/033;H01L21/308;H01L21/336;H01L29/423;H01L29/786 |
主分类号 |
H01L21/033 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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