| 发明名称 |
METHOD FOR MANUFACTURING TRANSISTOR |
| 摘要 |
<p>Using TDEAH as the source gas of hafnium, TDMAS as the source gas of silicon and an oxygen gas as the oxygen supply source, hafnium silicate is deposited on a major surface of a silicon substrate (101) by a chemical vapor deposition method under a process pressure of 100Pa, thereby forming an insulating film (102). Deposition is continued while changing the process pressure to a relatively high pressure of 800 Pa, thereby forming a gate insulating film (103).</p> |
| 申请公布号 |
WO2005038928(A1) |
申请公布日期 |
2005.04.28 |
| 申请号 |
WO2004JP15018 |
申请日期 |
2004.10.12 |
| 申请人 |
TOKYO ELECTRON LIMITED;NAKAMURA, GENJI;SUGAWARA, TAKUYA;MIYATANI, KOTARO;SHIMOMURA, KOUJI |
发明人 |
SUGAWARA, TAKUYA;MIYATANI, KOTARO;SHIMOMURA, KOUJI;NAKAMURA, GENJI |
| 分类号 |
H01L21/28;C23C16/40;H01L21/316;H01L21/318;H01L21/8238;H01L27/092;H01L29/423;H01L29/49;H01L29/51;H01L29/78;(IPC1-7):H01L29/78;H01L21/336 |
主分类号 |
H01L21/28 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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