| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a trench capacitor, in which junction leakage is reduced to improve data holding characteristics of a DRAM, and to provide a method of manufacturing the same. <P>SOLUTION: The trench capacitor DT1 comprises a semiconductor substrate 11, a trench 15 formed in the semiconductor substrate, a first doped polysilicon layer 17 which fills the lower part of the trench via a first dielectric film 16 and is doped with a first impurity having a first conductivity type, at least a second doped polysilicon layer 20 which fills the upper part of the trench via a second dielectric film 18, continues to the first doped polysilicon layer 17, and is doped with a second impurity, which is different from the first impurity but has a first conductivity type, and an embedded strap layer 21 which is formed on the second doped polysilicon layer 20 and is composed of a polysilicon layer doped with the first impurity. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
