| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an FeRAM (a ferroelectric memory: the Ferroelectric RAM) capable of preventing the peeling of a lower electrode and the increase of a contact resistance between a plug and the lower electrode. <P>SOLUTION: The FeRAM has a silicon substrate 1 containing source/drain regions 8 and a capacitor being formed to the upper section of the substrate 1, and containing the lower electrodes 20 to 23, a PZT film 24, and upper electrodes 25 and 26. The FeRAM further has a plug 17 which is formed between the substrate 1 and the capacitor, and in which a lower end is connected to the source/drain regions 8 and an upper section is connected to the lower electrodes 20 to 23; and a dummy plug 18 which is formed between the substrate 1 and the capacitor, and in which the lower end section is not connected to the source/drain regions 8 and the upper end is connected to the lower electrodes 20 to 23. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
