发明名称 |
Process for producing oxide films |
摘要 |
A process for producing bismuth-containing oxide thin films by Atomic Layer Deposition, including using an organic bismuth compound having at least one silylamido ligand as a source material for the bismuth oxide. Bismuth-containing oxide thin films produced by the preferred embodiments can be used, for example, as ferroelectric or dielectric material in integrated circuits and/or as superconductor materials.
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申请公布号 |
US2005089632(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20030696591 |
申请日期 |
2003.10.28 |
申请人 |
VEHKAMAKI MARKO;HATANPAA TIMO;RITALA MIKKO;LESKELA MARKKU |
发明人 |
VEHKAMAKI MARKO;HATANPAA TIMO;RITALA MIKKO;LESKELA MARKKU |
分类号 |
C07F9/94;C23C16/00;C23C16/40;C23C16/455;H01B3/12;H01B13/00;H01L21/316;H01L21/8246;H01L27/105;(IPC1-7):C23C16/00 |
主分类号 |
C07F9/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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