发明名称 |
SIOC PROPERTIES AND ITS UNIFORMITY IN BULK FOR DAMASCENE APPLICATIONS |
摘要 |
A method of forming a low-k dielectric material layer comprising the following steps. A first dielectric material sub-layer is formed over a substrate. The first dielectric material sub-layer is treated with an energy treatment to form a hardened layer on the upper surface of the first dielectric material sub-layer. A second dielectric material sub-layer is formed over the hardened layer, wherein the first dielectric sub-layer, the hardened layer and the second dielectric sub-layer comprise the low-k dielectric material layer. And a dual damascene structure and a dielectric material structure formed thereby.
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申请公布号 |
US2005090122(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20030692030 |
申请日期 |
2003.10.23 |
申请人 |
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发明人 |
JANG SYUN-MING;KO CHUNG-CHI;BAO TIEN-I;LI LIH-PING;LIU AI-SEN |
分类号 |
H01L21/316;H01L21/768;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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