| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To realize a structure with which a driving voltage of a modulator is further lowered by solving a problem associated with light loss and inefficient modulation efficiency caused by a structure of an electric separation part formed between an nin type InP/InGaAsP optical modulation waveguide and a modulation part connecting conduction part. <P>SOLUTION: The semiconductor opto-electronic waveguide has a structure in which a voltage is applied to a semiconductor core layer 14 by arranging first and third semiconductor cladding layers 13, 11 on the substrate side, inserting a fifth semiconductor layer 12 including a p-type dopant and having a band gap larger than that of the semiconductor core layer 14 between the first and third semiconductor cladding layers 13, 11, forming an n-type principal region on a part inside a fourth semiconductor cladding layer 16, making other regions maintain high resistance and arranging independent electrodes on the n-type principal region of the fourth semiconductor cladding layer 16 and on the third semiconductor cladding layer 11 respectively. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
