| 摘要 |
PROBLEM TO BE SOLVED: To provide a vapor phase epitaxial growth method capable of forming an epitaxial layer with high uniformity even if the growth conditions are different. SOLUTION: The vapor phase epitaxial growth method for forming a thin film on a substrate by material gas in a reaction chamber employs a system comprising a reaction chamber, a channel for supplying/discharging material gas onto/from the substrate, a substrate holding section, a means for moving the substrate holding section and the channel relatively, a means for controlling the moving means, and a means for heating the substrate. The control means measures the relative position of the channel and the substrate holding section for each growth conditions before starting epitaxial growth, stores the measured positional data, and controls the position of the substrate holding section or the channel such that variation in the relative position of the channel and the substrate holding section is reduced based on the set growth conditions and the stored positional data. COPYRIGHT: (C)2005,JPO&NCIPI
|
