发明名称 DOPING APPARATUS AND DOPING METHOD
摘要 PROBLEM TO BE SOLVED: To provide a doping apparatus capable of suppressing the occurrence of particles produced when being used, enhancing yield, and reducing the number of times of downtime, and to provide a doping method. SOLUTION: The inner wall of a chamber in the doping system is made affinity to doping elements. In the Figure, the wall material of the chamber 101 is formed of CaVO<SB>3</SB>. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2005113175(A) 申请公布日期 2005.04.28
申请号 JP20030345971 申请日期 2003.10.03
申请人 SEMICONDUCTOR ENERGY LAB CO LTD 发明人 HIZUKA JUNICHI;NAKAMURA OSAMU
分类号 C23C14/48;C23C14/00;H01L21/265;(IPC1-7):C23C14/48 主分类号 C23C14/48
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