| 摘要 |
PROBLEM TO BE SOLVED: To dissolve the problem that, although it is required to remove moisture from nitric oxide necessary in semiconductor production, or the like, a nitric oxide gas purifying material which does not advance disproportionation and decomposition reaction of nitric oxide gas and does not increase impurities, is not known. SOLUTION: The nitric oxide gas purifying material for removing minute amount of moisture contained in the nitric oxide gas by chemical adsorption is produced by depositing anhydrous aluminum fluoride on a surface of an inactive supporting body. Further, a purifier using the nitric oxide gas purifying material is also provided. COPYRIGHT: (C)2005,JPO&NCIPI
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