发明名称 Method for etching smooth sidewalls in III-V based compounds for electro-optical devices
摘要 III-V based compounds are etched to produce smooth sidewalls for electro-optical applications using BCl<SUB>3 </SUB>together with chemistries of CH<SUB>4 </SUB>and H<SUB>2 </SUB>in RIE and/or ICP systems. HI or IBr or some combination of group VII gaseous species (Br, F, I) may be added in accordance with the invention.
申请公布号 US2005090116(A1) 申请公布日期 2005.04.28
申请号 US20030692772 申请日期 2003.10.24
申请人 MIRKARIMI LAURA W.;CHOW KAI C. 发明人 MIRKARIMI LAURA W.;CHOW KAI C.
分类号 G03F7/20;H01L21/00;H01L21/302;H01L21/306;H01L21/3065;H01L21/3213;H01L21/461;(IPC1-7):H01L21/302 主分类号 G03F7/20
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