| 摘要 |
PROBLEM TO BE SOLVED: To perform deposition with a high gas dissociation efficiency by realizing a high quality film even at a low temperature of a substrate to be processed. SOLUTION: A plasma discharge generating unit for a plasma processing apparatus is equipped with a plurality of insulating units 3 extending into a direction parallel to the substrate to be processed with the shape of stripes, cathode electrodes 2a provided between at least mutually neighboring insulating units 3, and anode electrodes 2b provided at the end of the side of substrate 4 to be processed in respective insulating units 3. In this case, a plurality of gas introducing ports 6 formed in the cathode electrodes 2a are provided while being arrayed in a direction intersecting with the lengthwise direction of the insulating units 3 having the shape of stripes. COPYRIGHT: (C)2005,JPO&NCIPI
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