发明名称 |
Semiconductor device and method of forming the same |
摘要 |
A process for forming a semiconductor structure includes forming a gate dielectric overlying a substrate, a conductive gate electrode overlying the gate dielectric, a barrier layer overlying and in physical contact with the conductive gate electrode, and an organic anti-reflective coating (ARC) layer overlying and in physical contact with the barrier layer.
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申请公布号 |
US2005087870(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20030691984 |
申请日期 |
2003.10.23 |
申请人 |
ADETUTU OLUBUNMI O.;LUCAS KEVIN D. |
发明人 |
ADETUTU OLUBUNMI O.;LUCAS KEVIN D. |
分类号 |
H01L21/28;H01L21/4763;H01L23/48;H01L29/49;H01L29/51;H01L29/78;(IPC1-7):H01L23/48;H01L21/476 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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