发明名称 Semiconductor device and method of forming the same
摘要 A process for forming a semiconductor structure includes forming a gate dielectric overlying a substrate, a conductive gate electrode overlying the gate dielectric, a barrier layer overlying and in physical contact with the conductive gate electrode, and an organic anti-reflective coating (ARC) layer overlying and in physical contact with the barrier layer.
申请公布号 US2005087870(A1) 申请公布日期 2005.04.28
申请号 US20030691984 申请日期 2003.10.23
申请人 ADETUTU OLUBUNMI O.;LUCAS KEVIN D. 发明人 ADETUTU OLUBUNMI O.;LUCAS KEVIN D.
分类号 H01L21/28;H01L21/4763;H01L23/48;H01L29/49;H01L29/51;H01L29/78;(IPC1-7):H01L23/48;H01L21/476 主分类号 H01L21/28
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