| 摘要 |
When producing an exposure mask including mask blanks ( 12 ) for reflecting extreme ultraviolet light, an absorber film ( 14 ) for covering a light reflection plane of the mask blanks with a predetermined pattern, and a buffer film ( 13 ) interposed therebetween, the swing effect and the bulk effect that occur on a transferred portion of the predetermined pattern are specified in accordance with characteristic values of forming materials of the absorber film ( 14 ) and the buffer film ( 13 ) and optical conditions when exposing, and a forming film thickness of the absorber film is decided in consideration of the specified swing effect and the specified bulk effect so that the line width variation of the pattern and/or pattern shift of the pattern are at their minimum values. As a result, even for a reflection type exposure mask capable of dealing with extreme ultraviolet light, the line width variation and pattern shift after a wafer is exposed are minimized, and therefore it is possible to realize miniaturization of a transferred image appropriately. |
