发明名称 |
Method for high-resolution processing of thin layers using electron beams |
摘要 |
A method for etching a chromium layer in a vacuum chamber which may comprise introducing a halogen compound into the vacuum chamber, directing an electron beam onto the area of the chromium layer to be etched and/or introducing an oxygen including compound into the vacuum chamber. A further method for the highly resolved removal of a layer out of metal and/or metal oxide which may be arranged on an isolator or a substrate having poor thermal conductivity, may comprise arranging the layer inside a vacuum chamber, bombarding the layer with a focused electron beam with an energy of 3-30 keV, wherein the electron beam may be guided such that the energy transfer per time and area causes a localized heating of the layer above its melting and/or vaporization point and wherein the removal of the layer may be performed without the supply of reaction gases into the vacuum chamber.
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申请公布号 |
US2005087514(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20040927956 |
申请日期 |
2004.08.27 |
申请人 |
KOOPS HANS;EDINGER KLAUS;BABIN SERGEY;HOFMANN THORSTEN;SPIES PETRA |
发明人 |
KOOPS HANS;EDINGER KLAUS;BABIN SERGEY;HOFMANN THORSTEN;SPIES PETRA |
分类号 |
C23F1/12;H01L21/3213;(IPC1-7):C23F1/00 |
主分类号 |
C23F1/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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