发明名称 METHODS OF FORMING CONDUCTIVE STRUCTURES INCLUDING TITANIUM-TUNGSTEN BASE LAYERS AND RELATED STRUCTURES
摘要 Methods for forming an electronic device including a substrate, a conductive pad on the substrate, and an insulating layer on the substrate wherein the insulating layer has a via hole therein exposing a portion of the conductive pad. In particular, a conductive structure is formed on the insulating layer and on the exposed portion of the conductive pad. The conductive structure may include a base layer of titanium-tungsten (TiW) and a conduction layer of at least one of aluminum and/or copper. Moreover, the base layer of the conductive structure may be between the conduction layer and the insulating layer. Related devices are also discussed.
申请公布号 WO2005013339(A3) 申请公布日期 2005.04.28
申请号 WO2004US22949 申请日期 2004.07.16
申请人 UNITIVE INTERNATIONAL LIMITED;MIS, DANIEL, J.;ZEHNDER, DEAN 发明人 MIS, DANIEL, J.;ZEHNDER, DEAN
分类号 H01L21/60;H01L23/532 主分类号 H01L21/60
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