BIPOLAR TRANSISTOR WITH A HETEROJUNCTION WITH IMPROVED THERMAL TRANSFER

摘要

The invention relates to an electronic component with a heat sink, comprising one or several bipolar transistors on the active face of the substrate, each transistor embodied in a stack of semiconductor layers in the form of mesas, with at least one collector mesa. A diamond layer covers the form of the stack, which favours a thermal transfer via the flanks of the collector mesa towards the diamond layer and the heat sink is arranged on the diamond layer.