| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a highly reliable SiC substrate with a small surface roughness in which processing damage and cracks are reduced while the burden on a polishing device or on the environment is reduced. <P>SOLUTION: A method of manufacturing an SiC substrate includes a polishing step of polishing the surface of a plate-shaped SiC material 1 by moving a polishing pad 3, in which abrasive 6 is applied on a pad 3a, relatively to the surface of the SiC material 1 in a state where the polishing pad 3 is in contact with the SiC material 1, wherein the abrasive contains colloidal silica 6a and a dispersion medium 6b which contains the colloidal silica 6a dispersed therein, and the abrasive 6 has a pH of 4 to 9. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
