| 摘要 |
<P>PROBLEM TO BE SOLVED: To control secondary emission from a red color light emitting diode. <P>SOLUTION: In a light emitting diode 1, a light transmitting layer 3, a p-type AlGaAs active layer 4, and an n-type AlGaAs cladding layer 5 are epitaxially grown and sequentially formed on a p-type GaAs semiconductor substrate 2. The light transmitting layer 3 has an Al alloy ratio higher than that of the p-type AlGaAs active layer 4. When thickness of the active layer 4 and the thickness of the light transmitting layer 3 are controlled to be included in a range of 5 to 100 μm, a secondary emission intensity ratio to primary emission can be controlled. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
