| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor which can be manufactured in a simple process even a size of a semiconductor layer is small and does not increase contact resistances between a source electrode and a source area and between a drain electrode and a drain area. SOLUTION: The thin film transistor is equipped with a semiconductor layer 2 formed on a substrate 1, a gate insulating film 3 formed on the semiconductor layer 2, a gate electrode 4 formed on the gate insulating film 3, side wall films 6a formed on both sides of the gate electrode 4, and a source electrode 7 and drain electrode 8 connected with the semiconductor layer 2. The semiconductor layer 2, in plane view, includes a first area 2c piled on the gate electrode 4, a second area which is adjacent to the outside of the first area 2c and is piled on the side wall films 6a, and a third area which is adjacent to the outside of the second area and is directly connected with the source electrode 7 or the drain electrode 8. COPYRIGHT: (C)2005,JPO&NCIPI
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