发明名称 |
PLASMA CVD FILM DEPOSITION SYSTEM |
摘要 |
PROBLEM TO BE SOLVED: To increase plasma density in a film deposition system where a CVD (Chemical Vapor Deposition) film is deposited at least either the inner surface or the outer surface of a plastic vessel. SOLUTION: In the CVD film deposition system, the whole of the wall face in a space for storing a plastic vessel provided on an external electrode or a part of the wall face is provided with a secondary electron emission layer composed of a material having a secondary electron emission coefficient higher than that of an electrode material in the external electrode. Further, in an insulated state with the external electrode, the whole of the surface of an internal electrode arranged freely attachably/detachably at the inside of the vessel or a part of the surface is provided with a secondary electron emission layer composed of a material having a secondary electron emission coefficient higher than that of the electrode material in the internal electrode. COPYRIGHT: (C)2005,JPO&NCIPI
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申请公布号 |
JP2005113202(A) |
申请公布日期 |
2005.04.28 |
申请号 |
JP20030349190 |
申请日期 |
2003.10.08 |
申请人 |
MITSUBISHI SHOJI PLAST KK;UTEC:KK |
发明人 |
TAKEMOTO YOSHIHIDE;KAGE TAKESHI;KOBAYASHI TAKUMI |
分类号 |
B65D23/02;B65D1/02;B65D23/08;B65D25/34;C23C16/04;C23C16/509;(IPC1-7):C23C16/509 |
主分类号 |
B65D23/02 |
代理机构 |
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代理人 |
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地址 |
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