PROCESS FOR PRODUCING HIGH RESISTANCE SILICON WAFER, AND PROCESS FOR PRODUCING EPITAXIAL WAFER AND SOI WAFER

摘要

A process for producing a high resistance silicon wafer in which generation of oxygen donor can be suppressed efficiently by using a high resistance silicon wafer containing carbon and combining a first heat treatment by temperature raising operation (ramping) with a second heat treatment consisting of high temperature heat treatment and intermediate temperature heat treatment, and high resistance can be sustained even after heat treatment in the device fabrication process thus producing a high resistance silicon wafer in which variation of resistivity is suppressed. Since excellent epitaxial wafer and SOI wafer can be produced using the high resistance silicon wafer, the high resistance silicon wafer is applicable to a wide field including a high frequency communication device, an analog/digital hybrid device, and the like.