| 摘要 |
A semiconductor package for a bipolar transistor comprises a lead frame including a plurality of inner leads arranged in a resin mold package. The inner leads include a collector lead mounting thereon a transistor element and occupying substantially the upper half area of the package, a base lead located at a central part of the lower half area, and an emitter lead extending between the spaces between the collector lead and base lead for improvement of transistor characteristics in a high frequency range. The gap (0.2 mm) between the leads is smaller than the thickness (0.26 mm) of the lead frame for reduction of package size. After punching press of the metallic plate, the metallic pattern plate is subjected to press-bending and/or non-press bending technique for reducing the gap between the lead portions of the lead frame. |
