| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device achieving a high speed writing operation. SOLUTION: This device is provided with: a memory cell array 201 having a data storage part for storing data and a data inversion flag storage part for storing a data inversion flag being information regarding data inversion, and for outputting selected data and a data inversion flag regarding the data; a state machine 208 for determining whether the number of times of applying bias voltages is equal to or more than a predetermined number when data is written in the memory cell array, and instructing the transfer of inverted data and a data inversion flag being information on the inverted data to the memory cell array when the number of times of applying voltages is equal to or more than the predetermined number; and a data control circuit 205 for inputting data to be stored in the memory cell array 201 and transferring the inverted data and the data inversion flag to the memory cell array 201 based on the instruction of the state machine 208. COPYRIGHT: (C)2005,JPO&NCIPI
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