Reduce 1/f noise in NPN transistors without degrading the properties of PNP transistors in integrated circuit technologies

摘要

An interfacial oxide layer ( 185 ) is formed in the emitter regions of the NPN transistor ( 280, 220 ) and the PNP transistor ( 290, 200 ). Fluorine is selectively introduced into the polysilicon emitter region of the NPN transistor ( 220 ) to reduce the 1/f noise in the NPN transistor.