发明名称 |
Semiconductor device and method for fabricating the same |
摘要 |
A semiconductor device has contact plugs each for electrically connecting a capacitor element to the source/drain region of a transistor, conductive layers formed on the contact plugs and made of titanium nitride which is a nitride only of a refractory metal, and polycrystalline conductive oxygen barrier layers each composed of a multilayer structure consisting of a titanium aluminum nitride film, an iridium film, and an iridium oxide film to prevent the diffusion of oxygen. Since the conductive layers made of titanium nitride which is low in crystal orientation is provided under the oxygen barrier films, the titanium aluminum nitride films formed as the oxygen barrier films directly on the conductive layers have a compact film structure so that the penetration of oxygen is prevented effectively.
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申请公布号 |
US2005087788(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20040967273 |
申请日期 |
2004.10.19 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
KUTSUNAI TOSHIE;MIKAWA TAKUMI;JUDAI YUJI |
分类号 |
H01L21/02;H01L21/285;H01L21/8246;H01L27/115;(IPC1-7):H01L21/824;H01L29/94 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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