| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device that has transistors having different gate breakdown voltages or drain breakdown voltages and an MNOS memory transistor in the same semiconductor layer. SOLUTION: The method of manufacturing a semiconductor device, having high-withstand voltage transistors 100N and 100P, low-voltage-driven transistors 200N and 200P, and the MNOS memory transistor 300P, includes a step of forming laminated films by laminating silicon oxide layers and silicon nitride layers upon another; a step of removing the laminated films formed in high-withstand voltage transistor forming areas 10HV; and a step of forming first gate insulating layers 60 in the areas 10HV. The method also includes a step of removing the laminated films formed in low-voltage-driven transistor forming areas 10LV; a step of forming second gate insulating layers 62 in the areas 10LV; and a step of forming a gate electrode 70 in each area 10HV, 10LV and 10M. In addition, the method also includes a step of forming source and drain regions 42 and 52 in each area 10HV, 10LV and 10M. COPYRIGHT: (C)2005,JPO&NCIPI
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