| 摘要 |
A method for forming a word line spacer with good square profile comprising providing a semiconductor substrate having a patterned oxide layer, a polysilicon layer, and an oxide layer in sequence formed thereon. The four step etch sequence comprises a Breakthrough Etch (BT), a Main Etch (ME), an Oxide Etch, and an Overall Etch (OE) in order to complete the fabrication of word line spacer. The present invention provides a method for forming a word line spacer with good square profile, which removes an undesireable fence profile in order to form a word line spacer with good square profile.
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