发明名称 |
Electrode structure, and semiconductor light-emitting device having the same |
摘要 |
A semiconductor light emitting device including: a transparent substrate; an electron injection layer which is formed on the transparent substrate; an active layer which is formed on a first region of the electron injection layer; a hole injection layer which is formed on the active layer; a first electrode structure which is formed on the hole injection layer and concurrently provides a high reflectivity and a low contact resistance; a second electrode structure which is formed on a second region of the electron injection layer; and a circuit substrate which is electrically connected with the first and second electrode structures, the first electrode structure includes: a contact metal structure which has any one selected from the group consisting of nickel, palladium, platinum and ITO (Indium Tin Oxide) that have low contact resistance; and a reflective layer which has aluminum or silver.
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申请公布号 |
US2005087755(A1) |
申请公布日期 |
2005.04.28 |
申请号 |
US20040852151 |
申请日期 |
2004.05.25 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM HYUN-SOO;CHO JAE-HEE;YOON SUK-HO |
分类号 |
H01L33/32;H01L33/34;H01L33/38;H01L33/42;H01L33/46;H01L33/62;(IPC1-7):H01L33/00 |
主分类号 |
H01L33/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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