| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device wherein the deficiency of a Pb atom is prevented, the falloff of the amount of remanent polarization due to the iteration of polarization inversion is restrained, and the reliability over a long period of time is superior; and to provide its manufacturing method. <P>SOLUTION: In the semiconductor device, a substrate 11 is installed, and a silicon oxide film 12, a lower electrode layer 13, a ferroelectric oxide layer 14, a diffusion prevention layer 15, and an upper electrode layer 16, are laminated in order on the substrate 11. The diffusion prevention layer 15 is formed between the ferroelectric oxide layer 14 and the upper electrode layer 16, so that diffusion of Pb atoms of the ferroelectric oxide layer 14 to the upper electrode layer 16 is prevented, and the formation of Pb atom deficiency in the ferroelectric oxide layer 14 is inhibited. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
