| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device that can reduce the influence exerted by a reflected wave etc., by optimizing the continuity resistances of transistors constituting a bus switch. <P>SOLUTION: A bus switch 2 provided in the semiconductor integrated circuit device is disposed in an I/O buffer region RB, in the vicinity of the peripheral section of a semiconductor chip CH. The bus switch provided in the bus switch 2 is constituted of, for example, a CMIS switch composed of two transistors of an n-channel MIS and a p-channel MIS. The transistors are composed of MIS transistors, having high breakdown voltages of, for example, about 9.5 V and set to switch resistances (continuity resistances) of, for example, about 20Ω or larger (desirably, about 40 Ω). Consequently, the influence of reflected waveforms can be reduced and, at the same time, the reliability of the CMIS switch can be secured, even when high-voltage reflected waves are impressed. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
