PLASMA CHEMICAL VACUUM DEPOSITION APPARATUS, PLASMA-GENERATING METHOD, AND PLASMA CHEMICAL VACUUM DEPOSITION METHOD

摘要

PROBLEM TO BE SOLVED: To provide a plasma chemical vacuum deposition apparatus which effectively generates plasma even by a large high-frequency power, and more precisely adjusts generated plasma. SOLUTION: The plasma chemical vacuum deposition apparatus comprises a plurality of first matching devices 4-i and a discharge electrode 1, and a plurality of second matching devices 7-i and a counter electrode. The first matching device 4-i outputs a first electric power to a first output side; and matches the impedance in the first output side. The discharge electrode 1 arranged on the first output side receives the first electric power from one of the first several feeding points 15-i corresponding to each several first matching device 4-i. The second matching device 7-i outputs a second electric power to a second output side; and matches the impedance of the second output side. The counter electrode opposes to the discharge electrode 1. The discharge electrode 1 arranged on the second output side receives the second electric power from one of the second several feeding points 16-i corresponding to each several second matching devices 7-i. Thus, the apparatus forms a space of a charged gas between the discharge electrode and the counter electrode, and forms the film on a substrate. COPYRIGHT: (C)2005,JPO&NCIPI