| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for a semiconductor device, preventing attack on a lower part of an SOG film induced at the time of wet cleaning owing to difference in density of the film which is made by film thickness dependency on hardening process of the SOG film. SOLUTION: The manufacturing method for the semiconductor device comprises: a step for forming a plurality of adjacent electrically conductive patterns on a substrate; a step for forming etching stop films along formations of the electrically conductive patterns; a step for forming a fluid insulating film over the whole surface of the substrate after the forming of the etching stop films; a step for forming a photoresist pattern on the fluid insulating film; a step in which the fluid insulating film between adjacent electrically conductive patterns is etched using the photoresist pattern as an etching mask, and thereby contact holes where the etching stop films are exposed are formed; a step for forming an attack preventing film on an upside of the whole structure after the forming of the contact holes; a step in which the attack preventing film and the etching stop films at the bottoms of the contact holes are removed, and thereby the substrate is exposed; and a step for cleaning the insides of the contact holes. COPYRIGHT: (C)2005,JPO&NCIPI
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