摘要 |
There is disclosed a method of manufacturing a semiconductor device, comprising forming an underlying region including an interlevel insulating film on a semiconductor substrate , forming an alumina film on the underlying region, forming a hole in the alumina film , filling the hole with a bottom electrode film , forming a dielectric film on the bottom electrode film, and forming a top electrode film on the dielectric film. |
申请人 |
KABUSHIKI KAISHA TOSHIBA;INFINEON TECHNOLOGIES AG;IMAI, KEITARO;YAMAKAWA, KOJI;ITOKAWA, HIROSHI;NATORI, KATSUAKI;ARISUMI, OSAMU;NAKAZAWA, KEISUKE;MOON, BUM-KI |
发明人 |
IMAI, KEITARO;YAMAKAWA, KOJI;ITOKAWA, HIROSHI;NATORI, KATSUAKI;ARISUMI, OSAMU;NAKAZAWA, KEISUKE;MOON, BUM-KI |