FIELD EFFECT TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To attain high speed and high degree of integration of an MISFET by improving gate electrode structure. SOLUTION: The MIS field effect transistor of a short channel of self alignment type two-step metal gate electrode structure is constituted in such structure as described below: P-type impurity well region 2 and a trench element isolation region 3 are selectively formed on a p-type silicon substrate 1. A two-step gate electrode (Al) 8 is constituted of a narrow lower electrode 8a regulating a gate length through a gate oxide film 6 and barrier metal 7, and an upper gate electrode 8b formed more broadly than the via diameter on the p-type silicon substrate demarcated by the isolation region 3. An n-type source drain region 4 is self-aligned to the lower electrode 8a and formed on the p-type silicon substrate 1, and an n+-type source drain region 5 is self-aligned to the upper gate electrode 8b and formed on the p-type silicon substrate 1. The upper gate electrode 8b and the n+-type source drain region 5 are connected with Al wiring 14 having vertically barrier metal 13, 15 through a conduction plug 12 having barrier metal 11. COPYRIGHT: (C)2005,JPO&NCIPI